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| D G S TO-247 ARF465A ARF465B Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz. * Specified 300 Volt, 40.68 MHz Characteristics: * Output Power = 150 Watts. * Gain = 13dB (Class C) * Efficiency = 75% * Low Cost Common Source RF Package. * Low Vth thermal coefficient. * Low Thermal Resistance. * Optimized SOA for Superior Ruggedness. All Ratings: TC = 25C unless otherwise specified. ARF465A/B UNIT Volts MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Power Dissipation @ TC = 25C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1200 1200 6 30 250 0.50 -55 to 150 C Amps Volts Watts C/W 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) 1 MIN TYP MAX UNIT Volts 1200 7 25 A VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) (I D(ON) = 3A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 3A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 250 100 3 3 4 5 nA mhos Volts 7-2003 050-4921 Rev A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 200V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP ARF465A/B MAX UNIT 1200 80 30 7 5 21 12 1500 100 50 15 10 34 25 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 6:1 Test Conditions f = 40.68 MHz VGS = 0V VDD = 300V MIN TYP MAX UNIT dB % 13 70 15 75 Pout = 150W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 25 Class C VDD = 300V 20 Pout = 150W CAPACITANCE (pf) 10,000 5000 Ciss 1000 500 GAIN (dB) 15 10 Coss 100 50 Crss 10 0.1 1 10 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 5 0 10 20 40 50 60 70 80 90 100 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 30 10 ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 24 OPERATION HERE LIMITED BY RDS (ON) 8 10 5 100uS 6 7-2003 4 1 .5 TC =+25C TJ =+150C SINGLE PULSE 1mS TJ = -55C TJ = +25C TJ = +125C 10mS DC 050-4921 Rev A 2 0 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics .1 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area 1.2 VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 10 VGS=15V, 10V, 7V ID, DRAIN CURRENT (AMPERES) ARF465A/B 6.5V 1.1 8 6V 1 6 5.5V 4 5V 2 4.5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature 0.60 0.50 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0.05 10-4 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC Z JC , THERMAL IMPEDANCE (C/W) 0 10-5 SINGLE PULSE 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration RC MODEL Junction temp. ( "C) 0.0284 0.00155F 1.0 Power (Watts) 0.165 0.00934F 0.307 Case temperature 0.128F Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27 40 65 Zin () 21.4 -j 8.7 2.6 -j 7.3 .54 -j 2.9 .22 -j .69 .31 +j 1.65 ZOL () 206 -j 45 68 -j 99 22 -j 64 10.5 -j 44 4.4 -j 27 Zin - Gate shunted with 25 IDQ = 100mA ZOL - Conjugate of optimum load for 150 Watts output at Vdd = 300V 050-4921 Rev A 7-2003 ARF465A/B Bias 0 - 6V RF Input + C6 R1 C7 L5 L4 C9 L1 R2 C1 L2 DUT L3 C8 + 300V - C4 RF Output C3 C2 40.68 MHz Test Circuit C1 - 1000pF 100V chip ATC 700B C2-C5 - Arco 463 Mica trimmer C6-C8 - .01 F 500V ceramic chip C9 - 2200 pF COG 500 V chip L1 - 4t #20 AWG .25"ID .3"L ~110 nH L2 - 2t #20 AWG .25"ID .3"L ~ 25 nH L3-- 4t #16 AWG .4" ID .5"L ~290 nH L4 -- 25t #24 AWG .35"ID ~2uH L5-- VK200-4B ferrite choke 3uH R1-R2 -- 51 Ohm 0.5W Carbon DUT = ARF465A/B TO-247 Package Outline Top View 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. Source 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Device ARF - A ARF - B Gate Drain Source Source Drain Gate 7-2003 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. 050-4921 Rev A APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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